Radiation tolerance of 65 nm CMOS transistors
نویسندگان
چکیده
منابع مشابه
SAR ADC in 65 nm CMOS
This paper presents a Successive Approximation Register Analog-to-Digital Converter (SAR ADC) design for sensor applications. An energy-saving switching technique is proposed to achieve ultra low power consumption. The measured Signal-to-Noise-and-Distortion Ratio (SNDR) of the ADC is 58.4 dB at 2 MS/s with an ultra-low power consumption of only 6.6 μW from a 0.8V supply, resulting in a Figure-...
متن کاملLow cost and highly reliable radiation hardened latch design in 65 nm CMOS technology
As a consequence of technology scaling down, gate capacitances and stored charge in sensitive nodes are decreasing rapidly, which makes CMOS circuits more vulnerable to radiation induced soft errors. In this paper, a low cost and highly reliable radiation hardened latch is proposed using 65 nm CMOS commercial technology. The proposed latch can fully tolerate the single event upset (SEU) when pa...
متن کاملIntegration of NEMS resonators in a 65 nm CMOS technology
In this work we study the feasibility to obtain the smallest CMOS-NEMS resonator using a sub-100 nm CMOS technology. The NEMS resonators are defined in a top-down approach using the available layers of the 65 nm CMOS technology from ST Microelectronics. A combination of dry and wet etching is developed in order to release the NEMS in an in-house post-CMOS process. Two different NEMS resonators ...
متن کاملModeling Frequency Response of 65 nm CMOS RF Power Devices
This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (fT) and maximum oscillation frequency (fmax) decrease with increasing device width. Small-signal equivalent circuit extractions reveal that the main reason for the degradation in fT and fmax is the presence of non-scalable parasitic resistances...
متن کاملTunable Balun Low-Noise Amplifier in 65 nm CMOS Technology
The presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristic from 4.7 GHz up to 5.6 GHz and a continuously tunable ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Instrumentation
سال: 2015
ISSN: 1748-0221
DOI: 10.1088/1748-0221/10/12/p12007